The newest device is the first to deliver 4-bit-per-cell (quadruple-level cell, QLC) technology, advancing capacity beyond that of triple-level cell (TLC) devices. The prototype features the world’s largest die capacity (768 gigabits/96 gigabytes) with a 64-layer 3D flash memory process. This month, Toshiba started shipping prototypes to SSD and SSD controller vendors for evaluation and development purposes. The QLC 3D flash memory also enables a 1.5-terabyte (TB) device with a 16-die stacked architecture in a single package. The new QLC device targets applications such as enterprise SSD, consumer SSD and memory cards.
First quadruple-level cell 3D flash memory chip delivers 1.5TB
11 июля 2017 г.
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